The directional solidification furnace is a new type of vacuum furnace that uses the principle of medium frequency induction heating to sinter high melting point metals, cemented carbide, silicon carbide ceramics and other materials under vacuum or protective atmosphere conditions. The equipment usually has a vertical furnace structure, including a furnace body, a heating sensor (graphite or resistance is selected as the heating element), a heating and insulation layer, a directional crystallizer and a mobile lifting mechanism, an operating platform, an inflation system, a power supply and a control system. Vacuum system and other components.
The working principle of the directional solidification furnace is to gradually solidify the material into a material with a specific crystal structure by controlling the temperature gradient and crystal growth rate. For example, a single crystal growth furnace is a directional solidification furnace used to produce single crystal materials, while a polycrystalline growth furnace is used to produce polycrystalline materials. These materials have different crystal structures and properties and are widely used in aerospace, optoelectronics, semiconductor, construction, automotive, electronics and other industries.
Purchase information:
If you are interested in our directional solidification furnace, please contact us for more information.
Tel: 138 3857 9492
Email: carol@cysitech.com
Contact: Carol Xu
Wechat: 15290599353
WhatsApp/Skype: 13838579492
Technical parameters:
Product name | 2200℃ Directional Solidification Furnace |
Product model | CY-IV500-25KW-SS-DX |
Vacuum induction melting furnace | Advantage | This equipment can be used as a directional solidification furnace or vacuum melting. When used as a vacuum melting furnace, you only need to cover the cooling pool. |
Bar thickness | Φ10mm、Φ20mm、Φ30mm、Φ40mm、Φ50mm |
Maximum heating temperature | 2200℃ |
High frequency heating power supply | Frequency | 30-80KHz |
Max. input power | 25KW |
Load duration | 100% |
Input voltage | Three-phase 380V 50 or 60Hz |
Heating method | Induction heating |
Cavity inner diameter | 500mm |
Directional solidification crucible | Standard graphite crucible |
Crucible protective cover | Zirconium, quartz or aluminum oxide polycrystalline fiber or boron nitride protective sleeve |
Chamber vacuum (molecular pump unit) | < 9*10-4Pa |
Burnout protection and display | Yes |
Over temperature protection | Yes |
Overcurrent protection | Yes |
Temperature control mode | PID |
Temperature control precision | ±1~ 5 ℃ (above 600℃) |
Temperature detection method | Infrared thermometer, temperature range 1000~3200℃ |
Directional solidification mechanism | Directional solidification stroke and speed can be controlled through the left touch screen, the speed range is 0.1μm/s~2000μm/s |
Can a water-cooled crucible be connected to the vacuum chamber? | Ok |
Observation window size | Dia 90mm |
Vacuum pump unit | Input voltage | 380V /220V |
Bellows | KF40*1000mm |
Vacuum flapper valve | KF40 |
Backing pump | Pumping speed: 6L/s Vacuum level: 5Pa |
Composite vacuum gauge | Measuring range: 10-5 -105 Pa |
Secondary pump (Option I) | Molecular pump | Pumping rate: 600L/s |
Vacuum degree: 9*10-4Pa |
| Secondary pump (Option II) | Diffusion pump | Vacuum degree | 10-3Pa |
Pumping rate (N2) | 1000L/s |
Water cooler (optional) | Maximum flow | 16L/min |
Water tank capacity | 60L |
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Application: Monocrystalline Silicon Growth
(1)Equipment preparation
High vacuum directional solidification furnace:
Ensure that the equipment is in good condition, check the furnace body, vacuum system, cooling system and temperature control instrument.
Ensure that the furnace is clean and free of impurities.
Auxiliary equipment:
Prepare temperature sensors, pressure monitors and gas control systems.
(2)Material preparation
Raw materials:
Select high-purity silicon raw materials, usually with a purity of ≥99.9999% (6N silicon).
Silicon raw materials can be granular or blocky.
Crucible selection:
Use high-temperature corrosion-resistant crucibles (such as graphite or ceramic) for melting.
(3)Operation process
Charging:
Put the weighed high-purity silicon into the crucible to ensure uniform distribution.
Close the chamber:
Put the crucible into the directional solidification furnace and ensure that the furnace door is well sealed.
Evacuate:
Start the vacuum pump and reduce the pressure in the chamber to 10-5 mbar to prevent oxidation and impurities from mixing.
Heating process:
Set the heating temperature to 1450°C, start the induction heating system, and ensure that the temperature rises steadily.
Monitor the melt state to ensure uniform melting.
Directional solidification:
When the melt is completely melted, start the directional solidification system and slowly pull out the single crystal silicon seed crystal (seed crystal).
Control the cooling rate and temperature gradient, usually a cooling rate of several degrees per hour, to promote the formation of single crystals.
Growth process monitoring:
During the growth process, regularly check the growth state and quality of the crystal, adjust the temperature and pulling speed to ensure the quality of the crystal.
Cooling and removal:
After the growth is completed, turn off the heating system, wait for the casting to cool to room temperature, and take out the single crystal silicon rod.
Check the appearance, diameter and integrity of the crystal.
Post-processing:
Cut, grind and polish the single crystal silicon to meet the subsequent semiconductor device manufacturing needs.
(4) Precautions
Ensure that personnel wear appropriate protective equipment during operation.
Regularly check the operating status of the equipment to ensure safety and stability.
Monitor the melt temperature and crystal growth rate to ensure product quality.
