The 1200 ℃ RTP cabinet annealing furnace is a 12-inch wafer rapid annealing furnace that uses innovative heating technology to achieve true substrate temperature measurement without the need for traditional rapid annealing furnace temperature compensation. It has precise temperature control and high temperature repeatability. Its customers include many international semiconductor companies and well-known research teams, making it an ideal choice for semiconductor process annealing technology.
Product Overview：
The 1200 ℃ cabinet RTP annealing furnace is an efficient heat treatment equipment widely used for rapid heating and cooling treatment in semiconductor materials, nanomaterials, metal materials and other fields.
Product Features：
1. Rapid heating and cooling: Rapid heating is achieved through infrared lamp heating (maximum heating rate can reach 200 ° C/S).
2. High precision temperature control: The temperature control accuracy can reach ± 1 ℃, meeting the requirements of high-precision heat treatment.
3. Diversified heating methods: including infrared heating, resistance wire heating, etc., suitable heating methods can be selected according to different application needs.
4. Easy to operate: Equipped with an intelligent fuzzy control system, the interface is user-friendly and easy to set and control.
Purchase Information：
If you are interested in our Halogen lamp RTP annealing furnace system, please feel free to contact us for more information and pricing.
Contact phone number: 183-3926-3857
Email: jack@cysitech.com
Contact person: Jack Yang
WeChat: 183 3926 3857
Detailed Parameter：
Product name | 1200℃ Halogen lamp RTP annealing furnace |
Product model | CY-RTP1000-Φ300-T |
Substrate base | Quartz needle (optional SiC coated graphite base) |
Temperature range | 150-1250℃ |
Heating rate | 10-150℃/S |
Temperature uniformity | ≤±1.5% (@800℃, Silicon wafer) ≤±1.0% (@800℃, Substrate on SiC coated graphite susceptor) |
Temperature control accuracy | ≤ ±3℃ |
Temperature repeatability | ≤ ±3℃ |
Vacuum | 5.0E-3 Torr / 5.0E-6 Torr |
Gas supply | Standard 1 channel N2 purge and cooling gas circuit, controlled by MFC (up to 3 channels can be selected) |
Annealing duration | ≥35min@1250℃ |
Temperature control | Fast digital PID control |
Dimensions | 890mm*950mm*1400mm |
Substrate size | 12 inches |
Substrate base | Quartz needle (optional SiC coated graphite base) |
Major parts：
Major Parts | Description |
Major machine | Halogen lamp RTP annealing furnace |
Power Control system | 1 set |
Gas system | 1 set |
Vacuum pump | 1 set |
Other parts | (pipes, wires, wrenches, etc.) |
Manual | Standard |
Application field:
Metal material processing: used for annealing treatment of metal materials such as steel, iron, aluminum, copper, etc.
Electronic component manufacturing: Heat treatment of semiconductor devices to improve device performance and reliability.
Automotive industry: Heat treatment of automotive components to enhance the mechanical properties of materials.
Aerospace: Precision annealing of aerospace materials to ensure their high strength and temperature resistance.
Application Case: Annealing of Silicon Wafers in a 1200 ℃ Rapid Annealing Furnace
Necessary equipment and materials：
1. Halogen lamp RTP annealing furnace equipment
2. Silicon wafer: Prepare according to the specifications and types of silicon wafers that need to be annealed.
3. Protective gas: such as high-purity nitrogen or hydrogen, used to prevent silicon wafers from oxidizing at high temperatures.
4. Cleaning materials: used for cleaning silicon wafers and furnaces.
5. Quartz boat: Used to carry silicon wafers, it may need to be customized according to the size of the silicon wafer.
6. Cooling system: Water cooling or gas cooling system, used for rapid cooling.
7. Gas system: nitrogen or argon
Preparation Step:
Inspect the RTP annealing furnace to ensure it is in good working condition, including checking the furnace body, heating elements, temperature control system, and vacuum system.
Load the silicon wafers:
Place the silicon wafers on the tray or other loading devices inside the furnace chamber, ensuring that the wafers do not come into direct contact with the heating elements.
Set the process parameters:
According to the type of silicon wafer and the desired annealing effect, set the appropriate annealing temperature and time. The typical temperature range is between 400~1300°C.
Heating process:
Activate the RTP annealing furnace and heat according to the preset heating curve. The RTP annealing furnace typically has a very fast heating rate, which can reach 100°C/s.
Soaking treatment:
After the silicon wafers reach the preset annealing temperature, maintain a constant temperature for a period to ensure adequate adjustment of the internal structure of the wafers and elimination of residual stress.
Cooling process:
Once the soaking time is reached, turn off the heating power supply and allow the silicon wafers to cool naturally in the furnace, or perform rapid cooling as needed, such as using cooling gas for air cooling.
Remove the silicon wafers:
After the silicon wafers have cooled to room temperature, open the furnace door and remove the annealed wafers.
Quality inspection:
Conduct quality checks on the annealed silicon wafers, including surface inspection and electrical performance testing, to ensure the annealing effect meets expectations.
Cleaning and maintenance:
After completing the annealing, clean the furnace chamber, remove accumulated ash and debris, and perform necessary equipment maintenance.
Through the above steps, the RTP annealing furnace can effectively anneal silicon wafers, improving their internal crystal structure, eliminating stress, repairing ion implantation damage, and enhancing the performance and reliability of the wafers.
